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全国第二届半导体硅材料学术会议于1982年10月23日至29日在安徽黄山召开。出席会议的有12个部委从事半导体硅材料科研、生产单位和高等院校的代表165名。会议由中国金属学会委托上海有色金属研究所主办。会议收到有关硅多晶、单晶、硅片加工、检测、杂质与缺陷以及其它方面的论文121篇,全体会上宣读特约论文三篇,分组会宣读论文118篇。从这些论文和座谈讨论中可以反映出:1.在多晶工艺和设备上作了较深人的研究,对杂质行为,耐腐蚀材料,还原尾料回收以及降低成本等方面的研究取得了进展,提高了多晶的纯度与稳定性。2.直
The 2nd National Conference on Semiconductor Silicon Materials was held on October 23-29, 1982 in Huangshan, Anhui. Twelve ministries attended the meeting, including 165 representatives from semiconductor silicon materials research institutes, production units and institutions of higher learning. The meeting was entrusted by the China Institute of Metals to Shanghai Nonferrous Metal Research Institute. The conference received 121 articles on polycrystalline silicon, single crystal, silicon wafer processing, testing, impurities and defects, and other aspects. Three special papers were read in the plenary session, and 118 papers were read in the sub-group. From these dissertations and discussions, it is possible to reflect: 1. In-depth studies on polycrystalline processes and equipment, and advances in research on impurity behavior, corrosion-resistant materials, recovery of tailings, and cost reduction , Improve the purity and stability of polycrystalline. Straight