1.82-μm distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a H_2 O sensing s

• 作 者: 于红艳 潘教青 邵永波 王宝军 周代兵 王圩
• 机 构: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of S
• 出 处: Chinese Optics Letters
• 发表日期: 2013年03期
• 关键词: tuning strained grating suppression lasing absorbed tunable epitaxial cladding l

High-strained InGaAs/InGaAsP multiple quantum wells (MQWs) distributed feedback (DFB) lasers, fabricated using metal organic chemical vapor deposition, are presented at 1.82 μm with a high side-mode-suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/℃, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be applied to H_2 O concentration sensing.

High-strained InGaAs / InGaAsP multiple quantum wells (MQWs) distributed feedback (DFB) lasers, fabricated using metal organic chemical vapor deposition, are presented at 1.82 μm with a high side-mode-suppression ratio of 49.53 dB. -Tuning rates of the DFB mode wavelengths are 0.01 nm / mA and 0.13 nm / ° C, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be applied to H 2 O concentration sensing.