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采用有限积分法(FIT算法) ,并利用一种简单的等离子体模型模拟了具有轴对称的微波等离子体反应腔中微波场与等离子体的行为。计算出了给定等离子体的空间分布时电场的分布情况 ,以及给定电场的空间分布时等离子体的分布情况 ,从而得到微波———等离子体反应腔中电磁场稳定分布以及等离子体的放电位置。并依据实验中的一些可变参数 ,寻求影响等离子体放电位置的参数 ,为设计化学气相沉淀(CVD)技术沉积大面积金刚石膜微波反应腔提供依据
Finite integral method (FIT) was used to simulate the microwave field and plasma in an axisymmetric microwave plasma chamber with a simple plasma model. The distribution of the electric field in the space distribution of a given plasma and the distribution of the plasma in the spatial distribution of a given electric field are calculated to obtain the stable distribution of the electromagnetic field in the microwave-plasma reaction chamber and the discharge position of the plasma . According to some variable parameters in the experiment, the parameters influencing the plasma discharge location are sought to provide a basis for the design of chemical vapor deposition (CVD) technique for deposition of large-area diamond film microwave reaction chamber