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The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in Al Ga N/Ga N high electron mobility transistors. The device was measured every 5 min after the stress was removed. The large-signal parasitic source(drain) resistance, transfer characteristics, threshold voltage, drain–source current, gate–source(drain) reverse current–voltage characteristics changed spontaneously after the removal of the stress. The time constant of the self-changing was about 25–27 min. The gate–source(drain) capacitance–voltage characteristics were constant during this process. Electrons were trapped by the surface states and traps in the Al Ga N barrier layer when the device was under stress. The traps in the Al Ga N barrier layer then released electrons in less than 10 s. The surface states released electrons continuously during the entire measurement stage, leading to the self-changing of mearsurement result.
The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in Al Ga N / Ga N high electron mobility transistors. The device was measured every 5 min after the stress was removed. large-signal parasitic source (drain) resistance, transfer characteristics, threshold voltage, drain-source current, gate-source (drain) reverse current-voltage characteristics changed spontaneously after the removal of the stress. The time constant of the self-changing was about 25-27 min. The gate-source (drain) capacitance-voltage characteristics were constant during this process. Electrons were trapped by the surface states and traps in the Al Ga N barrier layer when the device was under stress. The traps in the Al Ga N barrier layer then released electrons in less than 10 s. The surface states released electrons continuously during the entire measurement stage, leading to the self-changing of mearsurement result.