Nonpolar a-plane light-emitting diode with an in-situ SiN_x interlayer on r-plane sapphire grown by

• 作 者: 方浩 龙浩 桑立雯 齐胜利 熊畅 于彤军 杨志坚 张国义
• 机 构: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking Un
• 出 处: Chinese Physics B
• 发表日期: 2011年01期
• 关键词: interlayer sapphire crystalline fabrication vapour silane attributed epitaxial r

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer.X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN x interlayer.The electrical properties are also improved.For example,electron mobility and sheet resistance are reduced from high resistance to 31.6 cm 2 /(V · s) and 460 /respectively.Owing to the significant effect of the SiN x interlayer,a-plane LEDs are realized.Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated.The emission peak remains constant when the injection current increases to over 20 mA.

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm 2 / (V · s) and 460 / respectively. Owing to the significant effect of the SiN x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488 nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.