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清华大学微电子所已初步建成了国内第一条1—1.5微米CMOS VLSI电路(超大规模集成电路)芯片工艺研制线,独立地开发成功了1.5微米设计规范的CMOS VLSI电路成套工艺技术。这一套工艺在研制1兆位汉字只读存贮器中得到了充分的验证。 成套工艺技术包括各项工艺条件摸索,工艺流程的设计和检测方法的确定。突破主要关键工艺包括微细线条曝光,显影,全正胶刻蚀,图形形貌的精度控制,细线条测量,高质量薄栅氧形成,离子注入技术,线结低温工艺,铝硅铜溅射工艺,硼磷硅玻璃等。
Tsinghua University, Institute of Microelectronics has initially built the first 1-1.5 micron CMOS VLSI circuit (VLSI circuit) chip technology development line, the successful development of a 1.5-micron CMOS VLSI circuit design specifications complete sets of technology. This set of technology in the development of 1 trillion Chinese characters read-only memory has been fully verified. Complete sets of technology, including the exploration of the process conditions, process design and testing methods to determine. The key breakthrough technologies include fine line exposure, development, full positive resist etching, precise control of pattern topography, thin line measurement, high quality thin gate oxide formation, ion implantation, low junction temperature junction technology, Al-Si sputtering process , Borosilicate glass and so on.