论文部分内容阅读
The physical mechanism of the resistance switching for RRAM with co-doped defects(Ag and oxygen vacancy)is studied based on the first principle calculations and the simulation tool VASR The interaction energy,formation energy and density of states of Ag and oxygen vacancy defect(V_O)are calculated.The calculated results reveal that the co-doped system is more stable than the system only doped either Ag or V_O defect and the impurity energy levels in the band gap are contributed by Ag and V_O defects.The obtained partial charge density confirmed further that the clusters are obvious in the direction of Ag to Hf ions,which means that it is Ag but V_O plays a role of conductive paths.For the formation mechanism,the modified electron affinity and the partial charge density difference are calculated.The results show that the ability of electron donors of Ag is stronger than V_O In conclusion,the conductivity of the physical mechanism of resistance switching in the co-doped system mainly depends on the doped Ag.
The physical mechanism of the resistance switching for RRAM with co-doped defects (Ag and oxygen vacancy) is studied based on the first principle calculations and the simulation tool VASR The interaction energy, formation energy and density of states of Ag and oxygen vacancy defect ( V_O) are calculated. Calculated results reveal that the co-doped system is more stable than the system only doped either Ag or V_O defect and the impurity energy levels in the band gap are added by Ag and V_O defects. The resulting partial charge density even further that the clusters are obvious in the direction of Ag to Hf ions, which means that it is Ag but V_O plays a role of conductive paths.For the formation mechanism, the modified electron affinity and the partial charge density difference are calculated.The. results show that the ability of electron donors of Ag is stronger than V_O In conclusion, the conductivity of the physical mechanism of resistance switching in the co-doped system major dep ends on the doped Ag.