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Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl_2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.
Reactive ion etching characteristics of GaAs, GaSb, InP and InAs using Cl_2 / Ar plasma have been investigated, it is that etching rates and etching profiles as functions of etching time, gas flow ratio and RF power. Etch rates of above 0.45 μm / min and 1.2 μm / min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm / min) were observed in etching of In-containing materials, which were linearly increased with the applied RF power. surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs, InP and InAs, however, were partly blackened in etching of GaSb due to a rough appearance.