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本文介绍的测量MOS界面态的方法,是用模拟运算电路的运算代替通常的数值计算的方法。它的测量原理建立在高频C-V法和准静态C-V法的基础上,测量的有效范围为10~(10)～13~(13)V~(-1)cm~(-2)。与数值计算方法得到的结果相比较,本方法在靠近禁带中心处较为准确,而在靠近禁带边缘的地方出现较大偏差。应用本法在20分钟内能得到一个样品的界面态密度分布N_(ss)～ψ_s分布曲线,又可在同样的时间内比较经不同工艺处理的几个样品的界面态密度分布。所得的结果快速而又直观。进一步改善线路,所需的测试时间还可以缩短。因此本方法有可能成为一种实用的测量方法。
This article describes the method of measuring the MOS interface state, is the use of analog computing circuit instead of the usual numerical calculation method. Its measuring principle is based on the high-frequency C-V method and the quasi-static C-V method. The effective measuring range is 10 ~ (10) ~ 13 ~ (13) V ~ (-1) cm ~ (-2). Compared with the numerical results, the proposed method is more accurate near the center of the forbidden band and larger near the edge of the band. Using this method, we can get the distribution curve of the state density N_ (ss) ~ ψ_s of a sample in 20 minutes, and compare the distributions of the density of states of the interface in several samples processed by different processes in the same time. The results obtained are fast and intuitive. To further improve the circuit, the required test time can also be shortened. Therefore, this method may become a practical measurement method.