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通过直流磁控反应溅射装置,在蓝宝石(0001)衬底和氮化的蓝宝石(0001)衬底上成功制备了氮化铝(AIN)薄膜。利用X射线衍射仪、原子力学显微镜和双光束扫描分光计,研究了蓝宝石氮化对AIN薄膜结构、应力、晶粒尺寸、形貌和光学性质的影响。X射线衍射研究表明:制备的AIN薄膜具有较强的(0002)择优取向,蓝宝石衬底的氮化不仅能够改善AIN结晶质量,而且还可以减少薄膜的残余应力。但是,原子力学显微镜结果表明:在蓝宝石衬底上制备的AIN薄膜的晶粒大小分布比在氮化的蓝宝石衬底上制备的AIN薄膜的晶粒大小分布更加均匀。我们认为,蓝宝石衬底在氮化的过程中形成的AIN具有过多的位错和缺陷,正是这些位错和缺陷造成了在氮化的蓝宝石衬底上制备的AIN薄膜的晶粒大小分布的不均匀性。吸收光谱显示:蓝宝石衬底的氮化并没有对AIN薄膜的光学性质产生明显的改善。
Aluminum nitride (AIN) thin films were successfully fabricated on sapphire (0001) and nitrided sapphire (0001) substrates by DC magnetron sputtering. The effects of sapphire nitriding on the structure, stress, grain size, morphology and optical properties of AIN films were investigated by X-ray diffraction, atomic force microscopy and two-beam scanning spectrometer. X-ray diffraction studies show that the prepared AIN film has a strong preferred orientation of (0002), and the nitridation of the sapphire substrate can not only improve the crystalline quality of AIN, but also reduce the residual stress of the film. However, AFM results show that the AIN films prepared on sapphire substrates have a more uniform grain size distribution than the AIN films formed on nitrided sapphire substrates. We believe that AIN formed during the nitridation of sapphire substrates has excessive dislocations and defects that are responsible for the grain size distribution of AIN films prepared on nitrided sapphire substrates Inhomogeneity. Absorption spectra show that the nitridation of the sapphire substrate did not significantly improve the optical properties of the AIN films.