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采用应力测试方法,获得了AlGaN／GaN HEMT漏极电流随时间的变化关系。实验结果表明, 应力导致漏极电流崩塌56．2％;不同电压应力条件下,只要所加时间足够长和电压足够大,相同栅压的电流崩塌程度都近似相等;漏极电流恢复时间与大小分别为34．5+αVGS与α(VGS-VT)(2-βt)。研究表明,栅- 漏间表面态捕获的电子使得表面电势发生变化,引起沟道中二维电子气浓度降低,从而导致电流崩塌效应的产生。此结论可望用于AlGaN／GaN HEMT器件电流崩塌效应进一步的理沦探索和器件研究。
The stress-test method was used to obtain the change of drain current of AlGaN / GaN HEMT with time. The experimental results show that the stress causes the drain current to collapse 56.2%. Under the condition of different voltage stress, the current collapse of the same gate voltage is approximately equal as long as the applied time is long enough and the voltage is large enough. The drain current recovery time and size Respectively 34.5 + αVGS and α (VGS-VT) (2-βt). The results show that the trapped electrons on the gate-drain surface make the surface potential change, which leads to the decrease of the two-dimensional electron gas concentration in the channel, which leads to the current collapse effect. This conclusion is expected to be used in further exploration and device research of current collapse in AlGaN / GaN HEMT devices.