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在对电容法测量Si片厚度的原理分析基础上,根据电阻率与介质介电常数ε的对应关系,分析了用电容法测试Si片厚度时,电阻率及电阻率均匀性对测试结果的影响,并采用千分尺(有接触测试)、ADE6034及Wafer Check 7000(电容法测试)分别对不同电阻率及电阻率均匀性的样品进行测试比对。实验结果证明,电容法可以测量高电阻率Si片的厚度等几何参数,但不能测量电阻率均匀率较差的Si片。同时,校正电容法测量设备时,以校正样片电阻率与被测Si片电阻率范围接近为原则。
Based on the principle analysis of the Si film thickness measured by the capacitance method, the influence of the resistivity and the uniformity of the resistivity on the test results when the Si film thickness is measured by the capacitance method is analyzed according to the correspondence between the resistivity and the dielectric permittivity ε , And the micrometer (with contact test), ADE6034 and Wafer Check 7000 (capacitance test) were tested against different resistivity and resistivity samples were compared. Experimental results show that the capacitance method can measure geometrical parameters such as the thickness of high resistivity Si wafers, but can not measure Si wafers with poor resistivity uniformity. In the meantime, when calibrating the capacitance measurement device, the principle of calibrating the resistivity of the sample and that of the measured Si chip are close to each other.