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大功率半导体激光器一般用作抽运源,但其抽运的离子吸收峰带宽一般都比较小。为提高大功率半导体激光器对固体或光纤激光器等的抽运效率,就要降低半导体激光器的输出波长随注入电流和热沉温度的漂移系数。分析了光栅深度和光栅填充因子对激光器输出波长锁定效果的影响,实验验证确定出合适的光栅参数,依据优化条件得出合适的激光器腔长,制备出锁定效果良好的宽条分布反馈激光器。该激光器的单管腔长2.4mm,发光条宽100μm,连续最大输出功率400mW,热沉温度为15℃时的输出波长为954nm,输出波长随注入电流的漂移系数为0.67nm/A,输出波长的温漂系数为0.046nm/K。
High-power semiconductor lasers are generally used as a pump source, but their pumping ion absorption peak bandwidth is generally small. In order to improve the pumping efficiency of high-power semiconductor lasers to solid or fiber lasers and the like, it is necessary to reduce the drift coefficient of the output wavelength of the semiconductor laser with the injection current and the temperature of the heat sink. The effect of grating depth and grating fill factor on the locking effect of laser output wavelength is analyzed. The experimental results show that the suitable grating parameters are obtained and the proper laser cavity length is obtained according to the optimization conditions. The wideband feedback laser with good locking effect is obtained. The single tube length of the laser is 2.4mm, the width of the light emitting strip is 100μm, the maximum continuous output power is 400mW, the output wavelength is 954nm when the heat sink temperature is 15 ℃, the drift coefficient of the output wavelength with the injected current is 0.67nm / A, The temperature coefficient of drift is 0.046nm / K.