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对采用中子嬗变掺杂(NTD)技术生产硅单晶作了研究,给出了几种不同气氛下成晶的NTD硅单晶对器件性能影响的试验结果及数据分析.
The production of single crystal silicon by using neutron transmutation doping (NTD) technology was studied. The experimental results and data analysis of the influence of several NTD silicon single crystals formed under different atmospheres on the device performance were given.