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本文论述的是一个双鼓泡瓶GaAs CVD系统,用它制备6千兆赫低噪声及4千兆赫功率MESFET所需的多层结构。不掺杂缓冲层的生长速度与自由载流子浓度是作为源鼓泡瓶、旁路鼓泡瓶中的AsCl_3克分子分数以及稀释度的函数,并被作为三元系统来分析。缓冲层的纵向n型本底杂质浓度很不均匀,下降很快,而靠近衬底-外延层界面的地方常常变为p型。根据所示数据就使一个受主扩散模型得到支持。受主补偿了缓冲层的全部施主。在8厘米~2的片子上做到:有源层掺杂可长期重复,厚度误差在±5％以内,均匀性在±3％以内。
This article discusses a dual-bubble GaAs CVD system that is used to produce the multi-layer structure required for 6 GHz low noise and 4 GHz power MESFETs. The growth rate and free carrier concentration of the undoped buffer are a function of the AsCl 3 mole fraction and dilution in the source bubbler, bypass bubbler, and are analyzed as a ternary system. The longitudinal n-type background impurity concentration of the buffer layer is very non-uniform, dropping rapidly, while the p-type near the substrate-epitaxial layer interface often becomes p-type. Based on the data shown, an acceptor diffusion model is supported. The recipient compensates all donors in the buffer. In 8 cm ~ 2 film to do: the active layer doping can be repeated for a long time, the thickness error within ± 5%, uniformity within ± 3%.