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Mid-wavelength infrared planar photodiodes were demonstrated,in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal organic chemical vapor deposition reactors.The formation of a planar homo junction was confirmed by secondary ion mass spectroscopy and its I-V characteristics.A cut-off wavelength around 5 μm was determined in 77K optical characterization,and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640 μm diameter.These preliminary results were obtained despite the structural degradation revealed by x-ray diffraction,and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.