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利用脉冲激光烧蚀技术在硅衬底上制备了类石墨薄膜,以该薄膜为阴极进行了场致电子发射实验。当在阴阳极之间加电场后,两极之间出现了放电现象。放电之后,类石墨薄膜的阈值电场大大降低了。当电场为20V/μm时,该薄膜的发射点密度可以达到106/cm2。利用Raman光谱、扫描电镜和X射线光电子谱对薄膜的表面形貌和微结构进行了测试。薄膜中的类石墨微结构对该薄膜的场致电子发射特性起了促进作用。场致电子发射实验显示类石墨薄膜作为冷阴极电子材料具有潜在的应用价值。
A graphite-like thin film was prepared on a silicon substrate by pulsed laser ablation, and field-induced electron emission experiments were carried out using the thin film as a cathode. When the electric field is applied between the anode and cathode, a discharge phenomenon occurs between the two poles. After discharge, the threshold electric field of graphite-like films is greatly reduced. When the electric field is 20V / μm, the film’s emission point density can reach 106 / cm2. The surface morphology and microstructure of the films were tested by Raman spectroscopy, scanning electron microscopy and X-ray photoelectron spectroscopy. The graphite-like microstructure in the film promotes the field-induced electron emission of the film. Field-induced electron emission experiments show that graphite-like films have potential applications as cold-cathode electronic materials.