论文部分内容阅读
eGaN FET两个最大的性能优势是可提供比MOSFET更高的效率和小得多的外形尺寸(通常D-PAK封装的MOSFET尺寸为65平方毫米,而采用超小型LGA封装的eGaN FET面积只有5.76平方毫米,缩小十几倍之多)。其它的性能优势包括:可很容易地与栅极驱动器集成、更高的功率密度、开
The two largest performance advantages of the eGaN FETs are higher efficiency and much smaller form factor than the MOSFETs (typically 65mm2 in MOSFET size for D-PAKs and only 5.76 in eGaN FETs in very small LGA packages Square millimeter, reducing more than ten times as many). Other performance benefits include: easy integration with gate drivers, higher power density, on