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利用 Ｐ－ＣＶＤ法在 Ｐ—ｎ硅太阳能电池上面形成非晶氮化硅防反射膜。利用改变 Ｐ－ＣＶＤ的工作参数很容易控制 ａ－ＳｉＮ－ＡＲＣ膜的反射指数，所以理论上可以形成很匹配的 ＡＲＣ膜。 利用这种技术生产的带有 ＡＲＣ 薄膜的硅太阳能电地在实用转换效率方面提高了 ４６％，与非镀膜的太阳能电池相比，短路电流提高 ４３％。
An amorphous silicon nitride anti-reflection film is formed on the P-n silicon solar cell by the P-CVD method. It is easy to control the reflection index of the a-SiN-ARC film by changing the working parameters of P-CVD, so a very compatible ARC film can theoretically be formed. The silicon solar with ARC film produced using this technology has a 46% improvement in practical conversion efficiency and an increase of 43% in short circuit current compared to uncoated solar cells.