AlGaInAs/InP coupled-circular microlasers

• 作 者: 黄永箴 林建东 姚齐峰 吕晓萌 杨跃德 肖金龙 杜云
• 机 构: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
• 出 处: Chinese Optics Letters
• 发表日期: 2012年09期
• 关键词: circular waveguide lasing longitudinal gallery suppression inductively etching r

AlGaInAs/InP coupled-circular microlasers with radius of 10- and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10 3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.

AlGaInAs / InP coupled-circular microlasers with radius of 10- and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2 × 10 3 is estimated from 3-dB width of a minor peak near the The current results show that in addition to the coupled modes, high-radial-order whispering gallery modes with traveling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.