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Semi-polar(1-101) In Ga N/Ga N light-emitting diodes were prepared on standard electronic-grade Si(100) substrates.Micro-stripes of Ga N and In Ga N/Ga N quantum wells on semi-polar facets were grown on intersecting {111} planes of microscale V-grooved Si in metal–organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared(1-101) Ga N, an In Ga N/Ga N LED was fabricated. Electroluminescence over 5 m A to 60 m A is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.
Semi-polar (1-101) In Ga N / Ga N light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of Ga N and In Ga N / Ga N quantum wells on semi-polar facets were grown on intersecting {111} planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1-101) Ga N, an In Ga N / Ga N LED was fabricated. Electroluminescence over 5 m A to 60 m A is found with a much lower blue-shift than that on the c-plane device. Such structures caused could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.