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采用感应炉熔炼及水雾化工艺制得了Cu-Si合金粉末,经N2、H2混合气体选择氮化和真空放电等离子烧结(SPS)成型,制备得到了Si3N4原位增强Cu基复合材料(Si3N4/Cu),利用萃取法研究了选择性氮化产物及其晶体结构。结果表明:复合粉末中N含量随氮化温度的升高和氮化时间的延长而增大。在1 000℃下氮化,持续时间大于60h时,粉末中的N含量明显提高;Cu的衍射峰出现整体向大角度方向的明显偏移,同时晶格常数变小,表明Si从Cu基体中脱溶,与N反应生成Si3N4;Si3N4/Cu复合材料的增强体以β-Si3N4为主;随着氮化温度的升高和氮化时间的延长,Si3N4/Cu复合材料的电导率和硬度逐步提高。
Cu-Si alloy powders were prepared by induction furnace smelting and water atomization process. After selective nitriding and vacuum discharge plasma sintering (SPS) forming by N2 and H2 mixed gas, Si3N4 in situ reinforced Cu matrix composites (Si3N4 / Cu), the selective nitridation of products and their crystal structure were studied. The results show that the content of N in the composite powders increases with the increase of the nitriding temperature and the extension of the nitriding time. When the nitriding is carried out at 1000 ℃ for more than 60h, the content of N in the powder obviously increases. The diffraction peak of Cu shows obvious shift to the large angle and the lattice constant becomes smaller. Degradation and reaction with N to form Si3N4; Si3N4 / Cu composite reinforced by β-Si3N4 mainly; with the increase of nitriding temperature and nitriding time, the conductivity and hardness of Si3N4 / Cu composites step by step improve.