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In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET(TGMC-LDMOS)on In GaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate results in the formation of two channels in the p-body region of the device. The drain metal is also placed in a trench to take contact from the n~+-In GaAs region located over the substrate. In a cell length of 5 m, the TGMC-LDMOS structure has seven channels, which conduct simultaneously to carry drain current in parallel. The formation of multi-channels in the proposed device increases the drive current(I_D)leading to a large reduction in the specific on-resistance(R_(on-sp). Due to better control of gates on the drain current, the new structure exhibits substantially higher transconductance(g_m)resulting in significant improvement in cut-off frequency(f_T)and oscillation frequency(f_(max)). Using two-dimensional numerical simulations, a 55 V TGMCLDMOS is demonstrated to achieve 7 times higher I_D, 6.2 times lower R_(on-sp), 6.3 times higher peak g_m, 2.6 times higher f_T, and 2.5 times increase in f_(max) in comparison to a conventional device for the identical cell length.
In this work, a new RF power trench-gate multi-channel laterally-diffused MOSFET (TGMC-LDMOS) on In GaAs is proposed. The gate-electrodes of the new structure are placed vertically in the trenches built in the drift layer. Each gate result in the formation of two channels in the p-body region of the device. The drain metal is also placed in a trench to take contact from the n ~ + -In GaAs region located over the substrate. m, the TGMC-LDMOS structure has seven channels, which conduct simultaneously to carry drain current in parallel. The formation of multi-channels in the proposed device increases the drive current (I_D) leading to a large reduction in the specific on-resistance ( Due to better control of gates on the drain current, the new structure exhibits a substantially higher transconductance (g_m) resulting in significant improvement in cut-off frequency (f_T) and oscillation frequency (f_ (max)). Using two-dimensional numerical simulations, a 55 V TGMCLDMOS is described to achieve 7 times higher I_D, 6.2 times lower R_ (on-sp), 6.3 times higher peak g_m, 2.6 times higher f_T, and 2.5 times increase in f_ (max) in comparison to a conventional device for the identical cell length.