Composite electron transport layer for efficient N-I-P type monolithic perovskite/silicon tandem sol

• 作 者: Bingbing Chen Pengyang Wang Renjie Li Ningyu Ren Yongliang Chen Wei Han Lingling Yan Qian Huang Dekun Zhang Ying Zhao Xiaodan Zhang
• 机 构: Institute of Photoelectronic Thin Film Devices and Technology,Renewable Energy Conversion and Storag
• 出 处: 能源化学
• 发表日期: 2021年12期
• 关键词: Lithium chloride additive Electron transport layer High efficiency Perovskite/Si

Perovskite/silicon tandem solar cells (PSTSCs) have exhibited huge technological potential for breaking the Shockley-Queisser limit of single-junction solar cells.The efficiency of P-I-N type PSTSCs has sur-passed the single-junction limit,while the performance of N-I-P type PSTSCs is far below the theoretical value.Here,we developed a composite electron transport layer for N-I-P type monolithic PSTSCs with enhanced open-circuit voltage (Voc) and power conversion efficiency (PCE).Lithium chloride (LiCl) was added into the tin oxide (SnO2) precursor solution,which simultaneously passivated the defects and increased the electron injection driving force at the electron transfer layer (ETL)/perovskite interface.Eventually,we achieved monolithic PSTSCs with an efficiency of 25.42％ and Voc of 1.92 V,which is the highest PCE and Voc in N-I-P type perovskite/Si tandem devices.This work on interface engineering for improving the PCE of monolithic PSTSCs may bring a new hot point about perovskite-based tandem devices.