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Fabrication and characterization of metal-semiconductor-metal ultraviolet(MSM UV) photodetector based on ZnO ultra thin(nano scale) films with Pd Schottky contact are reported.The ZnO thin film was grown on glass substrate by thermal oxidation of pre-deposited zinc films using vacuum deposition technique.With applied voltage in the range from -3V to 3V,the contrast ratio,responsivity,and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated.The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface.I-V characteristics were studied and the parameters,such as ideality factor,leakage current,resistance-area-product,and barrier height,were extracted from the measured data.
Fabrication and characterization of metal-semiconductor-metal ultraviolet (MSM UV) photodetector based on ZnO ultra thin (nano scale) films with Pd Schottky contact are reported. ZnO thin film was grown on glass substrate by thermal oxidation of pre-deposited zinc films using vacuum deposition technique. Apply voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibits a high gain which was attributed to the hole trapping at semiconductor-metal interface. IV characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-area-product, and barrier height, were extracted from the measured data.