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976 nm高效率半导体激光器是这几年研究的热点,在固体激光器泵浦领域有广阔的应用。通过优化半导体激光器材料外延结构中包覆层和波导层的铝组分,降低了工作电压;通过采用微通道水冷系统,并进行优化降低了热阻,从而提高了室温下的电光转换效率。25℃室温连续测试条件下,1 cm的线阵列(巴条),2 mm腔长,50%填充因子,在110 A下,出光功率为114.2 W,电压为1.46 V,电光转换效率为71%。15条微通道封装成的垂直叠阵,进行光束整形后,获得了室温976 nm连续输出功率1 500 W,电光转换效率大于70%。
The 976 nm high efficiency semiconductor laser is the hot point in recent years. It has a wide range of applications in the field of solid-state laser pumping. By optimizing the aluminum composition of the cladding layer and the waveguide layer in the epitaxial structure of the semiconductor laser material, the operating voltage is reduced. The microchannel water cooling system is optimized and the thermal resistance is reduced, thereby improving the electro-optical conversion efficiency at room temperature. Under the condition of continuous test at 25 ℃, 1 cm linear array (bar), 2 mm cavity length and 50% fill factor were obtained. Under 110 A, the output power was 114.2 W, the voltage was 1.46 V and the electro-optic conversion efficiency was 71% . 15 microchannels were vertically packed. After beam shaping, the continuous output power of 976 nm at room temperature was 1 500 W and the electro-optic conversion efficiency was over 70%.