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本文分析并总结了涉及原子层沉积(atomic layer deposition,ALD)技术基本原理的若干问题.介绍了等离子增强原子层沉积(plasma enhanced atomic layer deposition,PEALD)技术的优势及常见运用.相对于传统ALD系统,PEALD最大的特点在于其能够通过等离子体放电来活化前驱体源,提高对前驱体源,尤其是气态源的利用.利用PEALD这一特点可以增加传统ALD技术中可用氮源的种类.同时PEALD原位掺杂作为一种掺杂方法能够用于对光催化材料的掺杂改性,提高其光催化性能.此外,PEALD技术还适用于温度敏感材料和柔性材料上的薄膜沉积,可以获得更低的电阻率和更高的薄膜密度等.本文重点介绍了本课题组提出的PEALD原位掺杂技术及其对TiO2光催化剂的掺杂改性运用.最后对原位掺杂技术的研究方向和发展进行了展望.
In this paper, we analyze and summarize some problems related to the basic principle of atomic layer deposition (ALD) technology, and introduce the advantages and common applications of plasma enhanced atomic layer deposition (PEALD) technology.Compared with traditional ALD System, the greatest feature of PEALD is its ability to activate precursor sources by plasma discharge and increase utilization of precursor sources, especially gaseous sources. The use of PEALD enhances the types of available nitrogen sources in conventional ALD technology, PEADD as a doping method can be used for doping modification of photocatalytic materials to improve their photocatalytic properties.In addition, PEALD technology is also suitable for thin film deposition on temperature-sensitive materials and flexible materials, can be obtained Lower resistivity and higher film density, etc. This article focuses on PEAD in-situ doping technology proposed by our group and its application to doping modification of TiO2 photocatalyst.Finally, the in-situ doping technology Direction and development of the outlook.