退火温度对ZnO薄膜结晶和折射率的影响

• 作 者: 庞天奇 邓金祥 王吉有 陈亮 程祎 王翀
• 机 构: 北京工业大学应用数理学院,
• 出 处: 微纳电子技术
• 发表日期: 2015年02期
• 关键词: ZnO thin film magnetron sputtering anneal defect crystal grain size refract

采用磁控溅射法在石英衬底上制备出结晶性良好的氧化锌薄膜,并在氧气气氛中不同温度(100~800℃)下进行退火处理。然后利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)及椭偏仪对其结晶性能和光学性能进行了表征,探讨了退火温度对薄膜光学性能的影响,并分析其原因。研究表明:退火可以使c轴生长的薄膜取向性增强;同时晶粒尺寸增大,表明粗糙度也会增加。所测得的薄膜折射率变化范围为1.775~2.059,其中退火温度为500℃时对应相同波长的折射率最大,变化范围为1.894~2.059。

A good crystalline zinc oxide thin film was prepared on a quartz substrate by magnetron sputtering and annealed at different temperatures (100 ~ 800 ℃) in oxygen atmosphere. The crystallinity and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and ellipsometry. The effects of annealing temperature on the optical properties of the films were also discussed. The results show that annealing can enhance the orientation of the film grown on the c-axis. At the same time, the grain size increases, indicating that the roughness increases. The measured refractive indices of the films range from 1.775 to 2.059, of which the refractive index corresponding to the same wavelength is the largest at the annealing temperature of 500 ℃, ranging from 1.894 to 2.059.