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设计了双控太赫兹超材料调制器,并研究了其在太赫兹频段内两个频率处的反射特性。该调制器由开口环谐振器及其底部的“三明治”结构组成,“三明治”结构从上到下依次为石墨烯层、聚酰亚胺层和金层,其中开口谐振器的开口处填充硅。该结构可以通过电、光两种方式调制,即分别对调制器中的石墨烯施加低电压,对硅施加弱光照。结果显示:反射谱在频率0.806THz、1.869THz出现两个共振反射谷,在满足低激励的条件下,增强两种激励均能改变共振反射谷的反射强度。两个共振处的反射调制方向表现出先反向、后同向的特点,其临界点对应的石墨烯费米能级和硅电导率分别为13.489meV、970.54S/m。文章对同时施加两种激励的情况进行了详细研究,结果表明:同时施加两种激励的调制特性并非单独施加激励的数值叠加,电、光两种调制方式相互独立。在调制过程中,调制器出现的最大调制深度为99.74%。
A dual-controlled terahertz metamaterial modulator is designed and its reflection characteristics at two frequencies in the terahertz band are studied. The modulator consists of an open ring resonator and a “sandwich ” structure at the bottom. The “sandwich” structure is graphene layer, polyimide layer and gold layer from top to bottom, The opening is filled with silicon. The structure can be modulated by electricity and light in two ways, that is, applying low voltage to the graphene in the modulator and weak light to the silicon respectively. The results show that there are two resonance reflection valleys in the reflection spectrum at the frequencies of 0.806 THz and 1.869 THz, and the enhancement of both stimuli can change the reflection reflectivity of the resonant reflex valley under the condition of low excitation. The reflection modulation directions of the two resonances show the characteristics of first inversion and backward co-occurrence. The Fermi level and silicon conductivity of the graphene corresponding to the critical point are respectively 13.489 meV and 970.54 S / m. In this paper, a detailed study is made on the simultaneous application of two kinds of excitation. The results show that the modulation characteristics of applying two kinds of excitation at the same time are not the numerical addition of excitation alone, and the two kinds of modulation methods of electricity and light are independent from each other. During modulation, the maximum modulation depth that the modulator appears is 99.74%.