Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate

• 作 者: Dujun ZHAO Zhaoxi WU Chao DUAN Bo MEI Zhongyang LI Zhongxu WANG Qing TANG Qing YANG Yinhe WU Weihang ZHANG Zhihong LIU Shenglei ZHAO Jincheng ZHANG Yue HAO
• 机 构: Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian Univers
• 出 处: 中国科学：信息科学（英文版）
• 发表日期: 2022年2期
• 关键词: reverse-blocking voltage AlN/AlGaN HEMTs Schottky-drain field plate optimal pass

In this paper,Schottky-drain reverse-blocking AlN/AlGaN HEMTs with drain field plate(FP)have been investigated by Silvaco-ATLAS tools.For HEMTs without FP,with the increase of Al mole fraction in AlGaN channel from 0 to 0.5,the reverse-blocking voltage increases from-158 V to-720 V.By using the drain field plate technique,a second electric field peak is introduced and the reverse-blocking voltage can be improved.Combined with the optimization of the SiN passivation thickness,optimal electric field management can be achieved to obtain the highest reverse-blocking voltage devices.Since HEMTs with different Al mole fractions possess different critical electric field values,the optimal SiN thickness are varied.With the increase of the Al mole fraction from 0 to 0.5,the reverse-blocking voltage increases from-510 V to-4500 V for HEMTs using drain FP and optimal SiN passivation thickness,and a high power figure-of-merit of 1.171 GW/cm2 is achieved.AlGaN channel HEMTs with Al mole fraction demonstrate great potential for power applications.