论文部分内容阅读
用水平常压MOCVD系统生长了2—4μm波段的Ga_xIn_(1-x)As_(1-y)Sb_y合金.气相源包括三甲基镓、三甲基铟,三甲基锑(TMGa、TMIn、TMSb)及砷烷(AsH_3).研究了富GaSb的Ga_xIn_(1-x)As_(1-y)Sb_y的生长特性.发现Ⅴ族源输入绝对量影响Ⅴ族元素的分布系数及Ⅲ族源的利用效率.这表明表面反应动力学对生长有一定影响.固相组分由微电子探针测量.用光致发光、红外吸收技术对合金进行了表征.光致发光光谱半高宽,在2.13μm处仅为30meV.用光致发光,红外吸收测量的结果导出四元合金的带隙G_g~∞,并由组分x,y计算了带隙,实验和计算的结果符合得很好.PL谱半高宽较宽和红外吸收谱的吸收边较缓是可能在固相中存在组分群造成的.
The Ga_xIn_ (1-x) As_ (1-y) Sb_y alloy was grown in the 2-4μm band using a horizontal pressure MOCVD system.The gas phase sources include trimethylgallium, trimethylindium and trimethyl antimony (TMGa, TMIn, (1-x) As_ (1-y) Sb_y with GaSb was investigated.The results showed that the absolute value of the input of the Ⅴ source affected the distribution coefficient of the Ⅴ element and the source of the group Ⅲ source Which indicates that the surface reaction kinetics has a certain influence on the growth.The solid phase component is measured by microelectronic probe.The alloy was characterized by photoluminescence and infrared absorption.The photoluminescence spectrum was full at half height and width at 2.13 μm is only 30meV.The bandgap G_g ~ ∞ of the quaternary alloy is derived from the result of photoluminescence and infrared absorption measurement, and the bandgap calculated from the components x, y, the experimental and calculated results are in good agreement.PL The broadening of the FWHM and the absorption edge of the IR absorption spectrum may be caused by the presence of component groups in the solid phase.