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用深能级瞬态谱（ＤＬＴＳ）研究退火及离子注入对分子束外延生长的ＧｅＳｉ／Ｓｉ应变超晶格性质的影响，观察到３个与位错有关的深中心和１个表层内的深中心，退火和离子注入都使得这些深中心的浓度增加数倍，说明ＧｅＳｉ／Ｓｉ应变超晶格不适应做过多的热处理．同时测定Ｐｄ＋注入在ＧｅＳｉ／Ｓｉ超晶格的杂质能级为ＥＣ＝０．２８ｅＶ，与体Ｓｉ中的Ｐｄ杂质能级一致．
The effect of annealing and ion implantation on the properties of GeSi / Si strained superlattice grown by molecular beam epitaxy was studied by deep level transient spectroscopy (DLTS). Three deep dislocation-related centers and one deep within the surface layer were observed Center, annealing, and ion implantation all increased the depths of these deep centers several fold, indicating that the GeSi / Si strained superlattices are not suitable for excessive heat treatment. At the same time, the impurity level of Pd + implanted in GeSi / Si superlattice is EC = 0.28eV, which is consistent with the Pd impurity level in bulk Si.