论文部分内容阅读
针对非制冷980 nm半导体激光器组件的封装结构,对采用倒装贴片封装的激光器模块内部芯片外延层、热沉和焊料层进行了优化设计,运用有限元法(FEM)对微型双列直插(mini DIL)非制冷980 nm半导体激光器在连续波(CW)驱动条件下的热场分布进行了模拟计算。对比了倒装贴片和正装贴片的激光器热特性,并对实际封装的激光器光电性能进行了测试。倒装贴片型非制冷980 nm半导体激光器的输出光谱在0～70℃时中心波长漂移仅为0.2 nm,半峰全宽(FWHM)小于1.6 nm.边模抑制比(SMSR)保持在45 dB以上,最大出纤功率达200 mW。研究结果表明,倒装贴片的非制冷980 nm半导体激光器在热稳定性和光电性能方面都有较大提高,能够满足高性能小型化掺铒光纤放大器对非制冷980 nm半导体激光器的性能要求。
Aiming at the package structure of the uncooled 980 nm semiconductor laser module, the internal chip epitaxial layer, heat sink and solder layer of the laser module using flip-chip packaging are optimized. The finite element method (FEM) (mini DIL) uncooled 980 nm semiconductor laser under continuous wave (CW) driving conditions were simulated. The thermal characteristics of the flip-chip and front-mounted lasers are compared, and the optoelectronic properties of the actual packaged lasers are tested. The output spectrum of the flip-chip uncooled 980 nm semiconductor laser has a central wavelength shift of only 0.2 nm and a full width at half maximum (FWHM) of less than 1.6 nm at 0 ° C. to 70 ° C. The side mode suppression ratio (SMSR) remains at 45 dB Above, the maximum fiber output power of 200 mW. The results show that the flip-chip uncooled 980 nm semiconductor laser has great improvement in thermal stability and optoelectronic performance, which can meet the performance requirements of uncooled 980 nm semiconductor laser with high performance miniaturized erbium-doped fiber amplifier.