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由于SOI器件较小的灵敏体积,使得它的抗SEE能力明显好于体硅(Bulk)器件;衬底与顶层器件的绝缘,不但彻底消除了单粒子闩锁效应(SEL),并且在总剂量效应、剂量率方面及性能方面较体硅器件都有一定提高,因此,SOI器件在航天方面越来越受重视。然而,埋层氧化物也带来了一些负面效应,比如“浮体效应”。负面效应不仅致使顶层体区产生的电荷会被收集,一定条件下,漏区和衬底的电荷也会对电路产生影响。这些效应会严重影
Due to the smaller sensitive volume of the SOI device, its resistance to SEE is significantly better than that of Bulk devices. Insulation of the substrate and the top device not only completely eliminates the single-cell latch-up effect (SEL) Effect, dose rate and performance than the bulk silicon devices have a certain increase, therefore, SOI devices in space more and more attention. However, buried oxide also has some negative effects, such as “floating effect ”. Negative effects not only cause the charge in the top body region to be collected, but also the charge on the drain region and the substrate under certain conditions can affect the circuit. These effects can be severe