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ZnS films were successfully grown by metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure on (100)GaAs substrates.The deposition was carried out at substrate temperature between 280～550℃ with optimisation of reactor de-sign and growth conditions,the gas phase prereaction is effectively restrained.These epilayers exhibit high crystallographic quali-ty and reveal a mirror surface morphology,the peak halfwidths of X-ray diffraction patterns from their (400) faces are within0.06～0.09°.The epilayers grown on (111) GaAs,(110) Al_2O_3 and (100) Si are proved single crystalline feature as well.The op-tical and electrical characteristics of ZnS epilayers are measured by photoluminescence,cathodeluminescence,and Van der Pauwmethod.The results indicate that there are not a large number of deep centers that could be detected both at 77K and at roomtemperature,a broad CL peak around 2.897eV and 2.672eV are observed only under very strong excitation,their origin has notbeen examined.All epilayers present high resistivities up to 10~(13)Ω·cm.
ZnS films were successfully grown by metalorganic chemical vapor deposition (MOCVD) at atmospheric pressure on (100) GaAs substrates. The deposition was carried out at substrate temperature between 280 and 550 ° C with optimization of reactor de-sign and growth conditions, the gas phase The epilayers exhibit high crystallographic quali-ty and reveal a mirror surface morphology, the peak halfwidths of X-ray diffraction patterns from their (400) faces are within 0.06 ~ 0.09 °. The epilayers grown on (111) GaAs, (110) Al_2O_3 and (100) Si are proved single crystalline feature as well. The op-tical and electrical characteristics of ZnS epilayers are measured by photoluminescence, cathode luminescence, and Van der Pauwmethod. The results indicate that there are not a large number of deep centers that could be detected both at 77K and at roomtemperature, a broad CL peak around 2.897eV and 2.672eV are observed only under very strong excitation, their origin has notbeen examined. All epilayers present high resistivities up to 10 ~ (13) Ω · cm.