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报道了用分子束外延(MBE)方法生长掺杂InGaAs的PIN InP/InGaAs/InP外延材料,通过台面制作、硫化处理、ZnS/聚酰亚胺双层钝化、电极生长等工艺,制备了256元正照射台面InGaAs线列探测器,278K时平均峰值探测率为1.33×1012cmHz1/2W-1.测试了不同钝化方式探测器典型I-V曲线和探测率,硫化可以减小探测器暗电流,ZnS/聚酰亚胺双层钝化效果最好.并对ZnS/聚酰亚胺双层钝化InGaAs探测器进行了电子辐照研究.256元InGaAs探测器阵列与两个CTIA结构128读出电路互连并封装,在室温时,焦平面响应率不均匀性为19.3%.成功实现了室温扫描成像,图像比较清晰.
The PIN InP / InGaAs / InP epitaxial materials doped with InGaAs were grown by molecular beam epitaxy (MBE). The surface of 256 The element is irradiated on the table InGaAs line detector, the average peak detection rate is 1.33 × 1012cmHz1 / 2W-1 at 278K.The typical IV curve and detection rate of different passivation detectors are tested.The curing can reduce the detector dark current, ZnS / Polyimide double passivation is the best, and ZnS / polyimide double passivation InGaAs detector electron irradiation research .256 InGaAs detector array with two CTIA structure 128 readout circuit Interconnected and packaged, at room temperature, the response rate of the focal plane non-uniformity of 19.3%. The successful realization of the room temperature scanning imaging, the image more clearly.