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采用射频共溅射方法将微晶锗纳米颗粒埋入SiO2 介质中 ,然后在不同温度的氮气氛中进行热处理。用拉曼光谱、变温电导特性测试等实验分析手段进行特性研究。结果表明 ,埋入SiO2 介质中的微晶锗的平均尺寸随热处理的条件变化而变化 ,复合薄膜的光致发光的强度和电导率与微晶锗的平均尺寸有关。当微晶锗的平均尺寸约 3nm时 ,复合薄膜的电导率最大 ,光致发光的强度在 2 .175ev和 2 .2 46ev峰位处得到加强
The RF co-sputtering method is used to embed the microcrystalline germanium nanoparticles in the SiO2 medium, and then heat-treat in a nitrogen atmosphere at different temperatures. Raman spectroscopy, temperature-dependent conductance characteristics of experimental analysis methods for characterization. The results show that the average size of microcrystalline germanium embedded in SiO2 medium varies with the conditions of heat treatment. The photoluminescence intensity and conductivity of the composite film are related to the average size of microcrystalline germanium. When the average size of microcrystalline germanium is about 3 nm, the conductivity of the composite film is the largest, and the photoluminescence intensity is strengthened at the peak of 2.175 eV and 2.226 eV