Crystallization of μc-Si on plastic substrate by using a pulsed double-frequency YAG laser

• 作 者: Hoi Sing Kwok
• 机 构: Department of electronic and computer engineering The Hong Kong University of Science and Technology
• 出 处: Optoelectronics Letters
• 发表日期: 2008年03期
• 关键词: crystalline annealing crystallinity pulsed annealed crystallized crystallize uni

thin film transistors(TFTs) of microcrystalline silicon(μc-Si) can provide higher mobility and stability than that of a-Si and better uniformity than that of poly-Si TFTs,and it would be more suitable to be applied to larger-area AMOLEDs. By using 2wYAG laser annealing,crystalline μc-Si thin film on plastic substrate has been investigated and the proper laser energy needed for crystallization has been indicated. It has been found that the dehydrogenation process at 300-450 oC for a few of hours could be omitted by decreasing the H content in the crystallization precursor,which is suitable for laser crystallization on plastic substrates. The crystalline volume fraction(Xc) and the grain size of the resulted μc-Si could be adjusted by controlling the laser energy. By this method,the μc-Si on plastic substrate with Xc and grain size is respectively 85%(at the maximum) and 50 nm.

thin film transistors (TFTs) of microcrystalline silicon (μc-Si) can provide higher mobility and stability than that of a-Si and better uniformity than that of poly-Si TFTs, and it would be more suitable to be applied to larger-area AM has been found that the dehydrogenation process at 300-450 oC for a few of hours The crystalline volume fraction (Xc) and the grain size of the derived μc-Si could be adjusted by controlling the laser energy. By this method, the μc-Si on plastic substrate with Xc and grain size is respectively 85% (at the maximum) and 50 nm.