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应用磁控共溅射技术和后退火方法制备了 Ga As/ Si O2 纳米颗粒镶嵌薄膜 ,并分别应用原子力显微镜、X射线衍射和卢瑟福背散射实验来观测薄膜的形貌、相结构和化学组分 .结果表明 Ga As纳米颗粒的平均直径很小 (约为1.5～ 3.2 nm) ,且均匀地分布于 Si O2 之中 ,薄膜中的 Ga As和 Si O2 组分都符合化学计量关系 .应用脉冲激光高斯光束对薄膜的光学非线性进行了 Z扫描测试和分析 .结果表明 ,薄膜的三阶光学非线性折射率系数和非线性吸收系数都由于量子限制效应而大大地增强 ,在非共振条件下 ,它们分别约为 4× 10 - 1 2 m2 / W和 2× 10 - 5m/ W,在准共振的条件下 ,它们分别约为 2× 10 - 1 1 m2 / W和 - 1× 10 - 4m/ W.
Ga As / Si O2 nanoparticles embedded films were prepared by magnetron sputtering and post-annealing method. The morphology, phase structure and chemical properties of Ga As / Si O2 nanoparticles were observed by atomic force microscopy, X-ray diffraction and Rutherford backscattering, respectively The results showed that the average diameter of GaAs nanoparticles was about 1.5 ~ 3.2 nm and uniformly distributed in Si O2, and the GaAs and Si O2 components in the films all fit the stoichiometry. The optical nonlinearity of pulsed laser Gaussian beam was measured and analyzed by Z-scan. The results show that the third-order optical nonlinear refractive index coefficient and nonlinear absorption coefficient of the film are greatly enhanced due to the quantum confinement effect. They are about 4 × 10 - 1 2 m2 / W and 2 × 10 - 5 m / W, respectively, and they are about 2 × 10 - 1 1 m2 / W and -1 × 10 - 4m / W.