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在SiF_4/Cl_2混合气体中对Si和 Tasi_2进行了反应离子刻蚀(RIE)的研究.得到中等的蚀速和高度的各向异性腐蚀.蚀速和腐蚀断面与气体成分有关,其它工艺参数影响不很大.用一步腐蚀作出了线宽4000A、间隔1000A 的TaSi_2/poly-Si多层材料的超精细结构.讨论了本系统的腐蚀机理.
Si and Tasi_2 were studied by reactive ion etching (RIE) in SiF_4 / Cl_2 mixed gas with moderate corrosion rate and high anisotropy corrosion rate.The corrosion rate and corrosion cross-section were related to gas composition and other process parameters Not too large.The ultrafine structure of TaSi_2 / poly-Si multi-layer material with 4000A line width and 1000A interval was made by one-step etching.The corrosion mechanism of this system was discussed.