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本文给出了分析ＧｅＳｉ／Ｓｉ应变异质结中应变分布和弯曲的力学模型．该模型将外延层和衬底中的应变分为失配应变和弯曲应变，在假设整个异质结构均匀弯曲的情况下，根据力学、平衡条件得到了计算应变异质结构应变分布和弯曲半径的有关公式．这些模型结果结合Ｘ射线双晶衍射测量和模拟可以得到外延层的生长参数和整个异质结构的应变分布及弯曲半径．
In this paper, the mechanical model of strain distribution and bending in GeSi / Si strain heterojunction is presented. The model divides the strain in the epitaxial layer and the substrate into mismatched strain and bending strain. Based on the mechanical and equilibrium conditions, the strain distribution and the bending radius of the strain structure are calculated under the assumption of uniform bending of the entire heterostructure The formula. The results of these models, combined with X-ray twin crystal diffraction measurements and simulations, provide the epitaxial layer growth parameters and strain distributions and bend radii for the entire heterostructure.