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Cu(In_xGa_(1-x))Se_2(CIGS)是四面体黄铜矿结构的半导体材料,因为效率高、反射少而成为太阳能电池热点材料,通过简单方便的溶剂热方法合成CIGS粉体。采用XRD对合成的粉体进行了表征,结果表明,随着温度变化,粉体中的组成也发生变化,当反应温度为150℃时,包含CIGS相和其它相,当反应温度升为1 80℃时,主要成分为CuGaSe_2和Ga_2Se_3相。当反应温度为200℃时,主要成分为CuGa_(0.3)In_(0.7)Se_2和Cu_Se_4。当反应温度为230℃时,形成单相C1GS,通过SEM和ICP,对单相CIGS进行了表征,SEM结果表明CIGS粒子的尺寸为100~500 nm。ICP结果表明CIGS的结构为CuIn_(0.43)Ga_(0.28)Se_(1.65)。
Cu (In_xGa_ (1-x)) Se_2 (CIGS) is a semiconductor material of tetrahedral chalcopyrite structure. Because of its high efficiency and low reflection, CIGS powder is a hot material for solar cells. The synthesized powders were characterized by XRD. The results showed that the composition of the powders changed with the temperature. When the reaction temperature was 150 ℃, CIGS phase and other phases were included. When the reaction temperature was increased to 180 ℃, the main components of CuGaSe_2 and Ga_2Se_3 phase. When the reaction temperature is 200 ℃, the main components are CuGa_ (0.3) In_ (0.7) Se_2 and Cu_Se_4. When the reaction temperature was 230 ℃, single-phase C1GS was formed. Single-phase CIGS was characterized by SEM and ICP. The SEM results showed that the size of CIGS particles was 100-500 nm. ICP results show that the structure of CIGS is CuIn_ (0.43) Ga_ (0.28) Se_ (1.65).