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对分子束外延生长带边激子发光的Ｓｉ１－ｘＧｅｘ／Ｓｉ量子阱结构，通过Ｓｉ离子自注入和不同温度退火，观测到深能级发光带和带边激子发光的转变．Ｓｉ离子注入量子阱中并在６００℃的低温退火，形成链状或小板式的团簇缺陷，它导致深能级发光带的形成，在８５０℃的高温退火后重新观测到带边激子发光．这种团簇缺陷的热离化能约为０１ｅＶ，比Ｓｉ中空穴或填隙原子缺陷的热激活能（约００５ｅＶ）高．这表明早期文献中报道的深能级发光带是由类似的团簇缺陷产生的．
For the Si1-xGex / Si quantum well structure with molecular beam epitaxy and edge-exciton emission, the transition of deep-level emission bands and exciton emission was observed by Si ion self-implantation and annealing at different temperatures. Si is ion-implanted into the quantum well and annealed at a low temperature of 600 ° C to form a chain-like or small-plate cluster defect that leads to the formation of a deep-level light emitting band. The band exciton luminescence is revisited after annealing at a high temperature of 850 ° C . The thermal dissociation energy of this cluster defect is about 0.1eV, which is higher than the thermal activation energy (about 005eV) of defects in Si hole or interstitial atoms. This shows that deep-level luminescent bands reported in earlier literature were generated by similar cluster defects.