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本文报导在(100)晶向InP衬底上,液相外延生长(λ=1.0～1.31μm)GaInAsP/InP双异质结的研究结果。测定了600—670℃温度范围内InP在In中的饱和溶解度,研究了Te、Sn和Zn、Mg等掺杂剂的行为。用X光双晶衍射法研究了GaInAsP/InP异质结的晶格失配,用扫描电镜电子束感生电流法和电化学C-V法研究了外延片中p-n结偏位现象。用光吸收法测试外延片吸收边,估算了外延片中四元层的禁带宽度,并与制管后的发光波长作了比较。外延片可制得发光波长1.0～1.3μm、功率达1mw(100mA工作电流)的光通讯用小面积发光二极管。
This paper reports the results of the GaInAsP / InP double heterojunction grown on (100) orientation InP substrate by liquid-phase epitaxial growth (λ = 1.0 ~ 1.31μm). The saturated solubility of InP in In was measured at 600-670 ℃. The behavior of dopants such as Te, Sn, Zn and Mg was studied. The lattice mismatch of the GaInAsP / InP heterojunction was investigated by X-ray double crystal diffraction method. The p-n junction misalignment in the epitaxial wafer was studied by scanning electron microscopy electron beam induced current method and electrochemical C-V method. The absorption edge of the epitaxial wafer was tested by light absorption method, the forbidden band width of the epitaxial wafer was estimated, and the emission wavelength was compared with that after fabrication. The epitaxial wafer can be made of light-emitting wavelength of 1.0 ~ 1.3μm, the power of 1mw (100mA operating current) for small area light-emitting diode.