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本文采用载体分馏法,以直流电弧作激发光源,在中型摄谱仪上,样品可不经分离富集,一次摄谱同时测定高纯钨中十七种杂质元素。测定下限达0.71-11ppm各元素的相对标准偏差为1-23%。一、实验条件的选择1.载体钨属多谱线元素,测定钨中的杂质元素,必须有效地利用载体及缓冲剂的作用,以分馏杂质,抑制基体蒸发,消除钨线及强背景的干扰,提高杂质元素的测定灵敏度。我们分别采用Ga_2O_3、Na_2CO_3、Li_2CO_3、SrCO_3.AgCl等载体进行了试验。结果表明,Ga_2O_3、Na_2CO_3和硫磺的混合物能造成被测杂质的有利蒸发。同时,钨虽是难熔金属,有很高的沸点,但氧化钨在300℃以上即有升华现象。因此,在分析WO_3中的杂质时,一般都要在试样中加入
In this paper, carrier fractionation method, the DC arc as the excitation light source, medium spectrograph, the sample can be separated without enrichment, a spectrum of simultaneous determination of seventeen kinds of high purity tungsten impurity elements. The relative standard deviation (RSD) of each element of determination limit 0.71-11ppm was 1-23%. First, the choice of experimental conditions 1 carrier tungsten is a multi-spectral element, the determination of tungsten impurity elements, the carrier and the buffer must be effective use of the role of fractionation impurities to inhibit matrix evaporation and eliminate the interference of tungsten lines and strong background , To improve the determination of impurity element sensitivity. We used Ga 2 O 3, Na 2 CO 3, Li 2 CO 3, SrCO 3. The results show that the mixture of Ga 2 O 3, Na 2 CO 3 and sulfur can cause favorable evaporation of the tested impurities. At the same time, though tungsten is a refractory metal, it has a very high boiling point, but the phenomenon of sublimation of tungsten oxide at 300 ° C or above. Therefore, in the analysis of WO_3 impurities, the general should be added to the sample