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本文利用扫描电镜对光纤断面进行了二次电子像、阴极射线发光(CL),Ge元素线性与二维分布的扫描。发现CL出现在光纤中心缺Ge区和芯/包界面区。这些区由于掺杂组分急剧变化引起很大的应力梯度,使Ge-O键断裂形成Ge-E’缺陷中心。Ge-E’中心不成对的电子在电子束激发下产生CL发光。比较了几种光纤和预制件的CL与Ge元素的分布。
In this paper, the scanning electron microscope (SEM) was used to scan the fiber cross-section by the second-order electron image, the cathode ray emission (CL) and the Ge element linearity and two-dimensional distribution. It was found that CL appeared in the absence of Ge region and core / package interface region in the fiber center. These regions suffer from large stress gradients due to drastic changes in the doping composition, which cause the Ge-O bond to break to form the Ge-E ’defect center. Unpaired electrons at the Ge-E ’center generate CL emission under electron beam excitation. The distributions of CL and Ge elements for several optical fibers and preforms were compared.