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日本京都大学和日本国际贸工部的科学家利用光刻技术制造出了一种在1.2μm波长上具有全光子带隙的光子晶体。这种光子晶体是用砷化镓或者磷化铟做的,这两种半导体均适合与发光器件集成在一起。其带隙效应达到了40多dB,反射率为99.99％。如果全
Kyoto University Japan and Japan’s Department of International Trade and Industry scientists use photolithography technology to produce a photonic crystal with all-photon bandgap at 1.2μm wavelength. This photonic crystal is made of gallium arsenide or indium phosphide, both of which are suitable for integration with light-emitting devices. Its bandgap effect reaches more than 40 dB with a reflectivity of 99.99%. If all