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本文讨论了一种专门研制的抗辐照功率MOSFET中的瞬态γ诱发“二次击穿”问题,并给出了用中子辐照方法控制少数载流子寿命的实验结果。这种方法在降低“二次击穿”的敏感度方面只获得了部分成功。
In this paper, we discuss the problem of transient γ-induced “secondary breakdown” in a specially developed anti-radiation power MOSFET. The experimental results of using neutron irradiation to control the minority carrier lifetime are given. This method only partially succeeded in reducing the sensitivity of “secondary breakdown”.