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用超高真空蒸发Ａｌ膜，结合氮化后处理工艺在Ｓｉ（１００）衬底上制备了ＡｌＮ晶态薄膜。用Ｘ射线衍射（ＸＲＤ）、傅立叶变换红外光谱（ＦＴＩＲ）和Ｘ射线光电子能谱（ＸＰＳ）等测试分析技术研究了薄膜的微结构特征。结果表明：经过１００００Ｃ３０分钟氮化处理后，能形成具有（００２）择优取向的ＡｌＮ薄膜。
AlN films were deposited on Si (100) substrates by ultra-high vacuum evaporation of Al films combined with nitridation post-treatment. The microstructure characteristics of the films were investigated by XRD, FTIR and XPS. The results show that AlN film with (002) preferential orientation can be formed after nitriding treatment at 10000 ℃ for 30 minutes.