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利用激光退火的方式在低温下制备多晶硅薄膜，采用ＸＲＤ、ＳＥＭ等分析手段，进行了表征与分析，对晶化的阈值能量密度进行了计算，并对激光退火的机理进行了探讨。研究结果表明：ａ－Ｓｉ晶化的阈值能量密度与薄膜的厚度无关，在晶化区内，晶粒尺寸的大小随着照射到薄膜表面的激光能量密度的增加而增加。
The polycrystalline silicon thin films were prepared by laser annealing at low temperature, characterized and analyzed by XRD, SEM and other methods. The threshold energy density of crystallization was calculated and the mechanism of laser annealing was also discussed. The results show that the threshold energy density of a-Si crystallization has nothing to do with the thickness of the film. In the crystallization zone, the size of the grain increases with the increase of the laser energy density on the surface of the film.